At Nexperia Manchester, we are expanding our Advanced Devices (TCAD) capability to accelerate innovation across our Power Trench MOSFET portfolio. As a Principal Device Engineer, you will play a critical role in shaping next‑generation device concepts, driving technology optimisation, and influencing early‑stage decisions that define our future products.
You will act as a senior technical contributor within BGMOS, applying first‑principles device physics and advanced TCAD simulation to guide development from concept through to industrialisation. This is a role for a deep technical thinker who enjoys solving complex problems, collaborating across functions, and turning simulation insights into real‑world semiconductor technologies.
What you will do
As a Principal Device Engineer, you will lead the TCAD‑driven development and optimisation of Power Trench MOSFET technologies. You will explore new device architectures, analyse performance trade‑offs, and translate simulation outcomes into process and layout requirements. You will support technology roadmaps, contribute to feasibility studies, and troubleshoot device‑level issues across development and production. You will collaborate closely with Process Integration, Product Development, Design, Manufacturing and Foundry partners, acting as a technical anchor for early‑stage innovation.
Key responsibilities
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Develop and optimise Power Trench MOSFET architectures using advanced TCAD simulation
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Perform electrostatic, thermal and reliability‑relevant simulations to guide device decisions
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Design and refine cell structures, termination schemes, and next‑generation device concepts
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Support technology roadmaps with quantitative trade‑off and feasibility analysis
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Translate simulation insights into process, layout and structural requirements
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Conduct day‑to‑day TCAD simulations, documentation, silicon learning support (splits, DOE, calibration), and troubleshooting of device‑level issues
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Engage in regular technical exchanges with Process Integration, Product Development, Design, Manufacturing and Foundry partners
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Contribute to intellectual property generation and early‑stage concept definition
What you will deliver
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High‑quality TCAD simulation outputs and device concept evaluations
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Optimised device architectures and termination schemes
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Quantitative trade‑off analyses supporting technology roadmap decisions
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Clear technical documentation and communication of simulation insights
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Contributions to silicon learning cycles and device‑level troubleshooting
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Technical inputs that influence product development and industrialisation
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IP disclosures and innovation proposals
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Strong cross‑functional collaboration across BGMOS and manufacturing partners
What you will need
Essential requirements
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MSc or PhD in Electrical Engineering, Physics, or a related field
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Several years’ experience in device engineering and TCAD‑based technology development
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Strong understanding of semiconductor device physics
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Deep expertise with TCAD tools (e.g. Synopsys Sentaurus)
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Experience with Power MOSFET device concepts, ideally trench‑based
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Ability to analyse performance, reliability and manufacturability trade‑offs
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Strong analytical and problem‑solving mindset
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Clear, structured technical communication skills
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Ability to travel occasionally as required
Beneficial
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PhD focused on power semiconductor devices
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Industrial or foundry experience in Power MOSFET technology
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Experience with process integration or layout‑driven device optimisation
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Knowledge of high‑field effects, ruggedness (UIS) and reliability mechanisms
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Understanding of foundry developments and process transfers
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Proactive, innovative mindset with the ability to challenge assumptions
Interview process
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Stage 1: Recruiter Review
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Stage 2: Teams interview
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Stage 3: On site or teams final interview and assessment
Your benefits will include
Remuneration & Reward
Excellent starting salary, Annual Incentive Plan of up to 20%, contributory pension scheme up to 9%, recognition rewards scheme, EV salary sacrifice scheme, income protection, and 12× salary life assurance policy.
Health & Wellbeing – 33 days annual leave, hybrid and flexible working, flexible benefits scheme, enhanced parental leave, on‑site medical centre, enhanced sick pay, subsidised canteen, employee assistance programme, retail and entertainment discounts, a variety of sports and social clubs.
Professional Development – Possibility for funded academic support up to PhD level, employee goal setting and development plans, huge growth potential both internally and globally within the business via both management and technical pathways.
Corporate Social Responsibility & Sustainability – A global commitment to becoming carbon neutral by 2035, working with suppliers who embrace and comply with the Nexperia Supplier Code of Conduct, paid time off for every employee to support charitable work up to four times per year.
Diversity, Equity & Inclusion – Corporate members of Neurodiversity in Business and a Disability Confident Employer. Dedicated Employee Resource Groups for Neuroinclusion, the LGBTQ+ community, and Women in Nexperia, with a commitment to increase women in management positions to 30% by 2030.
Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright © material and the word Nexperia® is a registered trademark.
D&I Statement
As an equal-opportunity employer, Nexperia values diversity not just because it is the right thing to do but because diverse teams perform better. We are dedicated to being inclusive, and a proof point of this dedication is that we were the main partner of the very first Dutch Paralympic Team NL House during the Paris 2024 Paralympic Games. Our recruitment process is inclusive and accessible to all, and we consider all applicants fairly, as well as providing a safe work environment and reasonable adjustments where requested.
In addition, we offer our colleagues the possibility to join employee resource groups such as the Pride Network Group or global and local Women's groups. Nexperia is committed to increasing women in management positions to 30% by 2030.
